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Editor-in-chief
LIU Yichun
Academician of Chinese Academy of Sciences,
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About the Journal
Chinese Journal of Vacuum Science and Technology (CJVST) is national level scientific journal operated by the Chinese Vacuum Society and approved by the Chinese Association for Science and Technology. CJVST pressed the first volume in 1981. Since then, CJVST has been listed as a Chinese Science Citation Database (CSCD) journal and Chinse Core Journal. CJVST publishes Chinese and English research papers on vacuum acquisition, improvement, testing, and application, involving the intersection of physics, chemistry, engineering, materials, biology and other disciplines.
Cover Aticle
Tactful Use of Low Angle Electrons in Scanning Electron Microscope
Research Progress of High-Pressure Cryopreservation for Multiscale Living Materials
Advances in Cryopreservation of Tissues and Organs
The Research History of Spinning Rotor Gauge
Single-Atom Spin Resonance in a Scanning Tunneling Microscope
more..Secondary Electron Suppression in a Compact ECR-DD Neutron Generator
LIAO Chenlun;MENG Xiancai;LI Xu;LI Chenxuan;XIE Yahong;CAO Xiaogang;XU Wei;LI Hui;LIANG Lizhen;During the operation of a neutron generator, D+ ions are accelerated and bombarded onto the titanium target. During the high-energy beam bombardment, secondary electrons are emitted from the target surface,increasing the power supply load and affecting the stability of the system. This study investigates the effects of different electrode structures on chamber temperature, vacuum level, and neutron yield. The results show that the shape of the electrode waist hole directly influences the number of secondary electrons escaping through the hole,which further affects the chamber wall temperature. This leads to the release of adsorbed gases from the wall,increasing the frequency of high-voltage arcing. The transmission paths of secondary electrons were analyzed.Simulations indicate that some sputtered secondary electrons from the target surface escape through the waist hole and strike the chamber wall, some impact the inner side of the electrode, and a small portion are accelerated in reverse to hit the ceramic window. These simulation results are consistent with observed physical traces. Based on these findings, experiments were conducted to suppress secondary electrons using resistors and magnetic fields.Results show that a 30-68 kΩ resistor effectively suppresses secondary electrons, achieving a higher neutron yield at a relatively lower current. Additionally, a 1.3 T remanent permanent magnet was used to create a magnetic field of about 100 Gs at the center, which effectively deflects secondary electrons, reducing current by approximately23% without impacting neutron yield. This demonstrates effective secondary electron suppression. Overall,maintaining the internal vacuum within the electrode, minimizing or avoiding openings on the electrode wall, and implementing effective secondary electron suppression measures can improve the stability of the neutron generator,thereby extending its service life.
The Effect of Low-Energy Plasma Bombardment on the Surface Properties of Monocrystalline Silicon
YU Tianxiang;XUE Zhuanzhuan;WU Pengyuan;Oleksiy Penkov;To investigate the effect of low-energy plasma bombardment on the surface physical properties of monocrystalline silicon. By controlling factors such as etching time and gas pressure inside the vacuum chamber,low-energy plasma is used to etch single-sided polished monocrystalline silicon(100). By measuring the etching depth, surface roughness, Raman spectroscopy, and contact angle of the silicon wafer after etching, the changes in the physical properties of the silicon wafer surface are studied. The experimental results show that as the etching time increases, the etching depth of the silicon wafer remains basically unchanged, while as the etching pressure increases, the etching depth of the silicon wafer first decreases and then increases. When the etching current is 0.1 A and the gas pressure is 2 mTorr, the surface roughness of the silicon wafer reaches a minimum value at an etching time of 40 s. The Raman spectra of the etched silicon wafers were measured, and it was found that the Raman second-order peak decreased slightly overall with increasing etching time. Silicon wafers were etched using argon ions and nitrogen ions respectively, and it was found that both showed varying degrees of increase in droplet angle after being stored in air for a period of time. The etched silicon wafers were stored separately in argon, nitrogen, and air environments, and the trend of water droplet angle changes on the surface of the silicon wafers was almost identical. Low temperature plasma bombardment has no significant effect on the thickness of silicon wafers in a short etching time, but has a certain effect on improving the surface roughness of silicon wafers and reducing the wettability of silicon wafers. Among them, silicon wafers treated with argon ion bombardment undergo a transition from hydrophilicity to hydrophobicity after being stored for a period of time.
Effect of RF-PECVD Growth Parameters on the Quality of Graphene Films
YUAN Qianghua;REN Jiangfeng;YIN Guiqin;The paper compares the morphology and quality of graphene films grown under different process conditions, and studies the effects of high-frequency power, discharge voltage, gas flow ratio, growth time, substrate temperature and substrate type on the quality of graphene films prepared by RF-PECVD in dual-frequency discharge. The experimental results show that the concentration of defects in graphene decreases with the increase of high-frequency power, but the thickness of the film decreases with the increase of high-frequency power. Under the conditions of 3 Torr and 5 Torr, graphene films may have more boundary defects. When the flow ratio of methane/argon is 10:30 and the growth time is 40 min, graphene films of good quality can be grown. The growth temperature has a great influence on the growth of graphene films, and at 300℃, graphene films cannot grow on the surface of nickel substrates, and when the growth temperature is lower than 600℃, graphene films with better quality cannot be grown. Finally, it is found that under the same growing conditions, the graphene film grown on the nickel substrate is less thick, but the graphene film grown on the copper substrate had fewer defects and better quality, which is related to the different growth modes of the film on the two substrates.
Study on Discharge Characteristics of Low Frequency Capacitively Coupled Ar/O_2 Plasmas
ZHANG Shuren;LIU Xiangmei;WANG Bo;LV Mingyu;In this paper, the one-dimensional fluid model is used to study the characteristics of Ar/O_2 discharge with a driving frequency of 40 kHz. The effects of external conditions such as voltage, pressure and plate spacing on the ionization rate, plasma density, electron temperature, and ion energy at the plate are discussed. The results show that the γ mode is dominant in the low-frequency discharge, the DA(drift-ambipolar) mode is very weak and almost negligible, and there is no mode conversion phenomenon when the external parameters change.Another characteristic of low-frequency discharge is high ion energy. In addition, the increase in voltage makes the plasma density and O_2~+ energy increase rapidly, and the electron temperature in the sheath region increases with the increase of voltage, but the electron temperature in the plasma region decreases with the increase of voltage. The increase in pressure and plate spacing will also increase the plasma density and ion energy, while the electron temperature in the sheath region and the plasma region decreases with the increase of pressure and plate spacing.
Fabrication of Composite Structure Metal Grid and Study on Its Infrared Transparency and Electromagnetic Shielding Characteristics
ZHOU Wenyuan;SHI Kai;SU Junhong;For the current requirements of electromagnetic shielding performance of infrared transparent devices in optoelectronic systems, this paper uses High Frequency Structure Simulator(HFSS) simulation software to simulate the electromagnetic shielding effectiveness(SE) of metal mesh grids with different mesh cycles, mesh line widths, substrate materials and substrate thicknesses, and analyzes the influence of each parameter on the performance of metal mesh grids. The influence of each parameter on the performance of metal mesh grating is analyzed. The simulation results show that the electromagnetic shielding effectiveness and infrared transmittance of single-layer metal mesh grids are contradictory to each other. In order to take into account the electromagnetic shielding effectiveness and infrared transmittance, this paper designs double-layer metal mesh grids with different structures, simulates their electromagnetic shielding effectiveness, investigates the factors affecting the electromagnetic shielding effectiveness of double-layer metal mesh grids, and then prepares double-layer metal mesh grids with a period of 600 μm and a line width of 20 μm. The performance of the prepared double-layer metal mesh grille is tested by using a vector network analyzer and a vacuum type Fourier transform infrared spectrometer,and the measured transmittance of the double-layer metal mesh grille in the 3 μm-5 μm band is about 86.5%, and the average shielding efficiency in the 12 GHz-18 GHz band reaches 25 dB, which is 2.5% lower than that of the single-layer metal grid grille but the SE is improved by 10 dB. Based on the comparison and analysis of the measured and simulated results of the metal mesh grille, the reasons affecting the measured results are given.
News
Congratulations to the 16 editorial board members of the Journal of Vacuum Science and Technology for being selected as the "Global Top 2% Scientists"!
2024-01-04 TopCongratulations to the 7 editorial board members of the Journal of Vacuum Science and Technology for being selected as the 2022 Elsevier " Highly Cited Chinese Researchers"
2024-01-04 TopWarm congratulations
more..Journal Dynamics
Advances in Cryopreservation of Tissues and Organs
Top211 National Societies of the China Association for Science and Technology jointly issued the Academic Publishing Ethics Convention
Top"Chinese Journal of Vacuum Science and Technology" Most Beautiful Cover Selection of the year 2021
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